Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cells

We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CuIn0.75Ga0.25S2 (pure-sulfide CIGSu) top cell, using GaP intermediate layer. Our purpose is to grow CIGSu films under epitaxial conditions on GaP/Si(001) to improve the top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGSu/Si tandem cells can emerge as cost competitive for the next generation of PV modules. Record efficiency on standard AZO/ZnMgO/CdS/CIGSu/Mo/Glass solar cell and epitaxy of CIGSsu on GaP/Si are demonstrated.

Mots clés

Tandem solar cells Silicon Solar cells Copper indium gallium selenide Crystals Deposition processes Electron microscopy Gallium arsenide Germanium Multijunction solar cells

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Matériaux

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https://hal.science/hal-03967808

Soumis le : mercredi 1 février 2023-15:16:49

Dernière modification le : jeudi 14 novembre 2024-16:00:06

Dates et versions

hal-03967808 , version 1 (01-02-2023)

Identifiants

HAL Id : hal-03967808 , version 1
DOI : 10.1117/12.2619151

Citer

Olivier Durand, Eugène Bertin, Nicolas Barreau, Eric Gautron, Antoine Létoublon, et al.. Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cells. Proceedings of SPIE, the International Society for Optical Engineering, PC12002, SPIE, pp.PC120020Q, 2022, Oxide-based Materials and Devices XIII, ⟨10.1117/12.2619151⟩. ⟨hal-03967808⟩

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