Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH4-H2-Ar plasmas
Résumé
Organometallic positive ions were identified in inductively coupled plasmas by means of mass spectrometry during the etching of Ge-Sb-Se materials in CH4-H2-Ar mixtures. Observation of polymetallic species (Mx-R, M = Ge, Sb, Se, x > 2, R = Hy or CHz) points out that recombination reactions occur in the plasma. Correlation with x-ray photoelectron analysis, showing the presence of C-M moieties indicates that chemical etching processes take place.
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